Operation and Modeling of the MOS Transistor (4th ed.) by Yannis Tsividis, Colin McAndrew

Operation and Modeling of the MOS Transistor (4th ed.) Yannis Tsividis, Colin McAndrew ebook
Publisher: Oxford University Press, USA
Page: 752
ISBN: 0195170156, 9780195170153
Format: pdf

Streetman, "Solid State Electronic Devices", 4th ed., Prentice Hall, 1995. The use of metal-oxide-semiconductor (MOS) devices in integrated circuit . Wakerly, Digital Design Principles and Practices, Fourth Edition, . Sedra and Smith : Microelectronic Circuits, IV Ed., Oxford University Press 1998. 11 Aug 2010 - 84 minMOS, Small Signal Modell, Integrated Circuit Design, Electrical Engineering. Haykin, Communication Systems, 4th Ed, John Wiley & Sons, New York, 2001. Four Terminal MOS Transistor: Transistor regions of operation, general charge sheet models, inversion, interpolation models, effective mobility, temperature effects, breakdown p-channel. Y.P.Tsividis : Operation and Modelling of the MOS Transistor, Mc Graw Hill, 1986. Tsividis, "Operation and Modeling of the MOS Transistor", 2 ed., McGraw Hill, 1999 B. Tsividis, Operation and Modeling of the MOS Transistor, McGraw-Hill, 1987. Electronic Communications, 4th ed. Dennis Roody & John Coolen: Electronic Communication, PHI, 4th edn. Operation and Modeling of The MOS transistor : Yannis Tsividis 2/e Oxford Uni- versity Press. Eshragian., “Basic VLSI Design” 3rd Edition. Analysis and Design of Analog Integrated Circuits (4th Edition), by Paul R. Outline: Operation and modeling of MOS transistors.